| (Values in U.S. Thousands) | Sep, 2021 | Jun, 2021 | Mar, 2021 | Dec, 2020 | Sep, 2020 |
| Sales | 1,340 | 1,170 | 1,340 | 1,600 | 1,970 |
| Sales Growth | +14.53% | -12.69% | -16.25% | -18.78% | unch |
| Net Income | -1,710 | -1,210 | -1,370 | -1,030 | -710 |
| Net Income Growth | -41.32% | +11.68% | -33.01% | -45.07% | -10.94% |
Mosys Inc (MOSY)
[[ item.lastPrice ]] [[ item.priceChange ]] ([[ item.percentChange ]]) [[ item.tradeTime ]] [NASDAQ]
[[ item.bidPrice ]] x [[ item.bidSize ]] [[ item.askPrice ]] x [[ item.askSize ]]
[[ session ]] by (Cboe BZX)
[[ item.lastPrice ]] [[ item.priceChange ]] ([[ item.percentChange ]]) [[ item.tradeTime ]] [NASDAQ]
[[ item.bidPrice ]] x [[ item.bidSize ]] [[ item.askPrice ]] x [[ item.askSize ]]
[[ session ]] [[ item.lastPriceExt ]] [[ item.priceChangeExt ]] ([[ item.percentChangeExt ]]) [[ item.tradeTimeExt ]]
for [[ item.sessionDateDisplayLong ]]
MoSys, Inc. develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented one-transistor-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in one-transistor-SRAM memory results in the technology achieving much higher density than traditional six transistor SRAMs while using the same standard logic manufacturing processes. one-transistor-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System-on-Chip designs.