| (Values in U.S. Thousands) | Dec, 2020 | Dec, 2019 | Dec, 2018 | Dec, 2017 | Dec, 2016 |
| Sales | 6,800 | 10,090 | 16,600 | 8,840 | 6,020 |
| Sales Growth | -32.61% | -39.22% | +87.78% | +46.84% | +37.13% |
| Net Income | -3,780 | -2,580 | -11,410 | -10,670 | -32,050 |
| Net Income Growth | -46.51% | +77.39% | -6.94% | +66.71% | -1.81% |
Mosys Inc (MOSY)
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MoSys, Inc. develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented one-transistor-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in one-transistor-SRAM memory results in the technology achieving much higher density than traditional six transistor SRAMs while using the same standard logic manufacturing processes. one-transistor-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System-on-Chip designs.