Releasing its second-generation 65nm BCD scalable power LDMOS expanding voltages to 24V operation and 20% lower Rdson; and adding deep trench isolation (DTI) to its 180nm BCD platform enabling up to 40% die size reduction for operation up to 125V
Tower Semiconductor Expands its Leading-Edge Power Management Platforms Supporting Higher Power and Higher Voltage ICs
Globe Newswire - Press Release
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